Jubin Nathawat

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Citations	369	313
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Jonathan Paul BirdProfessor of Electrical Engineering, University at BuffaloVerified email at buffalo.edu
Chun Pui Kwan (Jeffrey)GlobalFoundriesVerified email at buffalo.edu
Michael RandleRIKENVerified email at riken.jp
Ripudaman DixitIntel CorporationVerified email at intel.com
ratchanok somphonsaneAsst. ProfVerified email at kmitl.ac.th
harihara ramamoorthyKing Mongkut's Institute of Technology LadkrabangVerified email at kmitl.ac.th
Peter Dowben or P.A. Dowben or P. D...University of NebraskaVerified email at unl.edu
Miao ZhaoMicrowave devices and integrated circuits department , Institute of microelectronics of Chinese Academy of SciencesVerified email at ime.ac.cn
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Verified email at buffalo.edu
Nobuyuki AokiDepertment of Materials ScienceVerified email at faculty.chiba-u.jp
Jonas FranssonUppsala universityVerified email at physics.uu.se
Ajayan PMProfessor of Materials Science and NanoEngineering, Rice UniversityVerified email at rice.edu
Robert VajtaiRice UniversityVerified email at rice.edu
Alexander SinitskiiProfessor of Chemistry, University of Nebraska - LincolnVerified email at unl.edu
Alexey LipatovAssistant Professor, South Dakota School of Mines and Technology, University of Nebraska - LincolnVerified email at sdsmt.edu
Kohei SakanashiDepartment of Materials Science, Chiba UniversityVerified email at chiba-u.jp

Jubin Nathawat

Intel Corp.

Verified email at intel.com


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Gate-Controlled Metal–Insulator Transition in TiS₃ Nanowire Field-Effect Transistors M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ... ACS nano 13 (1), 803-811, 2018	68	2018
Thermally Assisted Nonvolatile Memory in Monolayer MoS₂ Transistors G He, H Ramamoorthy, CP Kwan, YH Lee, J Nathawat, R Somphonsane, ... Nano letters 16 (10), 6445-6451, 2016	66	2016
Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates CP Kwan, M Street, A Mahmood, W Echtenkamp, M Randle, K He, ... AIP Advances 9 (5), 2019	53	2019
Negative differential conductance & hot-carrier avalanching in monolayer WS2 FETs G He, J Nathawat, CP Kwan, H Ramamoorthy, R Somphonsane, M Zhao, ... Scientific reports 7 (1), 11256, 2017	34	2017
Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer J Nathawat, KKH Smithe, CD English, S Yin, R Dixit, M Randle, ... Physical review materials 4 (1), 014002, 2020	24	2020
Transient response of h-BN-encapsulated graphene transistors: signatures of self-heating and hot-carrier trapping J Nathawat, M Zhao, CP Kwan, S Yin, N Arabchigavkani, M Randle, ... ACS omega 4 (2), 4082-4090, 2019	19	2019
Probing charge trapping and joule heating in graphene field-effect transistors by transient pulsing H Ramamoorthy, R Somphonsane, J Radice, G He, J Nathawat, CP Kwan, ... Semiconductor Science and Technology 32 (8), 084005, 2017	18	2017
Epitaxial growth of cobalt oxide phases on Ru (0001) for spintronic device applications O Olanipekun, C Ladewig, JA Kelber, MD Randle, J Nathawat, CP Kwan, ... Semiconductor Science and Technology 32 (9), 095011, 2017	17	2017
Evaluating the sources of graphene’s resistivity using differential conductance R Somphonsane, H Ramamoorthy, G He, J Nathawat, CP Kwan, ... Scientific Reports 7 (1), 10317, 2017	15	2017
Asymmetrically engineered nanoscale transistors for on-demand sourcing of terahertz plasmons B Barut, X Cantos-Roman, J Crabb, CP Kwan, R Dixit, N Arabchigavkani, ... Nano Letters 22 (7), 2674-2681, 2022	11	2022
Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics K He, B Barut, S Yin, MD Randle, R Dixit, N Arabchigavkani, J Nathawat, ... Advanced Materials 34 (12), 2105023, 2022	9	2022
Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence R Somphonsane, H Ramamoorthy, G He, J Nathawat, S Yin, CP Kwan, ... Scientific reports 10 (1), 5611, 2020	7	2020
Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors S Yin, JG Gluschke, AP Micolich, J Nathawat, B Barut, R Dixit, ... ACS Applied Electronic Materials 1 (11), 2260-2267, 2019	7	2019
Pulsed studies of intervalley transfer in : A paradigm for valley photovoltaics R Dixit, B Barut, S Yin, J Nathawat, M Randle, N Arabchigavkani, K He, ... Physical Review Materials 4 (8), 085404, 2020	5	2020
Building the quasi one dimensional transistor from 2D materials PV Galiy, M Randle, A Lipatov, L Wang, S Gilbert, N Vorobeva, A Kumar, ... 2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering …, 2019	5	2019
Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene J Nathawat, I Mansaray, K Sakanashi, N Wada, MD Randle, S Yin, K He, ... Nature Communications 14 (1), 1507, 2023	4	2023
Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene N Arabchigavkani, R Somphonsane, H Ramamoorthy, G He, J Nathawat, ... Physical Review Letters 126 (8), 086802, 2021	3	2021
Real‐Time Observation of Slowed Charge Density Wave Dynamics in Thinned 1T‐TaS₂ S Yin, K He, B Barut, MD Randle, R Dixit, J Nathawat, D Adinehloo, ... Advanced Physics Research, 2400033, 2024	2	2024
Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics (Adv. Mater. 12/2022) K He, B Barut, S Yin, MD Randle, R Dixit, N Arabchigavkani, J Nathawat, ... Advanced Materials 34 (12), 2270097, 2022	1	2022
Universal voltage scaling due to self-averaging of the quantum corrections in graphene R Somphonsane, H Ramamoorthy, G He, J Nathawat, S Yin, JP Bird, ... arXiv preprint arXiv:1802.09922, 2018	1	2018

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