Dominique Vuillaume
Dominique Vuillaume
Research director, CNRS-IEMN
Adresse e-mail validée de iemn.fr - Page d'accueil
Titre
Citée par
Citée par
Année
Unimolecular electrical rectification in hexadecylquinolinium tricyanoquinodimethanide
RM Metzger, B Chen, U Höpfner, MV Lakshmikantham, D Vuillaume, ...
Journal of the American Chemical Society 119 (43), 10455-10466, 1997
8421997
Self assembled monolayers on silicon for molecular electronics
DK Aswal, S Lenfant, D Guerin, JV Yakhmi, D Vuillaume
Analytica chimica acta 568 (1-2), 84-108, 2006
5782006
Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films
J Collet, O Tharaud, A Chapoton, D Vuillaume
Applied Physics Letters 76 (14), 1941-1943, 2000
3932000
Suppression of charge carrier tunneling through organic self-assembled monolayers
C Boulas, JV Davidovits, F Rondelez, D Vuillaume
Physical review letters 76 (25), 4797, 1996
3531996
An organic nanoparticle transistor behaving as a biological spiking synapse
F Alibart, S Pleutin, D Guérin, C Novembre, S Lenfant, K Lmimouni, ...
Advanced Functional Materials 20 (2), 330-337, 2010
3402010
Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction
M Suri, O Bichler, D Querlioz, O Cueto, L Perniola, V Sousa, D Vuillaume, ...
2011 International Electron Devices Meeting, 4.4. 1-4.4. 4, 2011
2742011
Metal∕ organic∕ metal bistable memory devices
D Tondelier, K Lmimouni, D Vuillaume, C Fery, G Haas
Applied Physics Letters 85 (23), 5763-5765, 2004
2392004
Bio-inspired stochastic computing using binary CBRAM synapses
M Suri, D Querlioz, O Bichler, G Palma, E Vianello, D Vuillaume, ...
IEEE Transactions on Electron Devices 60 (7), 2402-2409, 2013
2242013
Theory of electrical rectification in a molecular monolayer
C Krzeminski, C Delerue, G Allan, D Vuillaume, RM Metzger
Physical Review B 64 (8), 085405, 2001
2202001
Molecular rectifying diodes from self-assembly on silicon
S Lenfant, C Krzeminski, C Delerue, G Allan, D Vuillaume
Nano letters 3 (6), 741-746, 2003
2062003
Plasticity in memristive devices for spiking neural networks
S Saïghi, CG Mayr, T Serrano-Gotarredona, H Schmidt, G Lecerf, J Tomas, ...
Frontiers in neuroscience 9, 51, 2015
1922015
Optoelectronic switch and memory devices based on polymer‐functionalized carbon nanotube transistors
J Borghetti, V Derycke, S Lenfant, P Chenevier, A Filoramo, M Goffman, ...
Advanced materials 18 (19), 2535-2540, 2006
1832006
A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing
F Alibart, S Pleutin, O Bichler, C Gamrat, T Serrano‐Gotarredona, ...
Advanced Functional Materials 22 (3), 609-616, 2012
1822012
Nano-field effect transistor with an organic self-assembled monolayer as gate insulator
J Collet, D Vuillaume
Applied physics letters 73 (18), 2681-2683, 1998
1751998
Visual pattern extraction using energy-efficient “2-PCM synapse” neuromorphic architecture
O Bichler, M Suri, D Querlioz, D Vuillaume, B DeSalvo, C Gamrat
IEEE Transactions on Electron Devices 59 (8), 2206-2214, 2012
1692012
Filamentary switching: synaptic plasticity through device volatility
S La Barbera, D Vuillaume, F Alibart
ACS nano 9 (1), 941-949, 2015
1612015
Organic insulating films of nanometer thicknesses
D Vuillaume, C Boulas, J Collet, JV Davidovits, F Rondelez
Applied physics letters 69 (11), 1646-1648, 1996
1561996
CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications
M Suri, O Bichler, D Querlioz, G Palma, E Vianello, D Vuillaume, ...
2012 International Electron Devices Meeting, 10.3. 1-10.3. 4, 2012
1522012
Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current–voltage characteristics
AK Chauhan, DK Aswal, SP Koiry, SK Gupta, JV Yakhmi, C Sürgers, ...
Applied Physics A 90 (3), 581-589, 2008
1402008
Physical aspects of low power synapses based on phase change memory devices
M Suri, O Bichler, D Querlioz, B Traoré, O Cueto, L Perniola, V Sousa, ...
Journal of Applied Physics 112 (5), 054904, 2012
1332012
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20