Unimolecular electrical rectification in hexadecylquinolinium tricyanoquinodimethanide RM Metzger, B Chen, U Höpfner, MV Lakshmikantham, D Vuillaume, ... Journal of the American Chemical Society 119 (43), 10455-10466, 1997 | 871 | 1997 |
Self assembled monolayers on silicon for molecular electronics DK Aswal, S Lenfant, D Guérin, JV Yakhmi, D Vuillaume Analytica chimica acta 568 (1-2), 84-108, 2006 | 646 | 2006 |
An organic nanoparticle transistor behaving as a biological spiking synapse F Alibart, S Pleutin, D Guérin, C Novembre, S Lenfant, K Lmimouni, ... Advanced Functional Materials 20 (2), 330-337, 2010 | 417 | 2010 |
Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films J Collet, O Tharaud, A Chapoton, D Vuillaume Applied Physics Letters 76 (14), 1941-1943, 2000 | 405 | 2000 |
Suppression of charge carrier tunneling through organic self-assembled monolayers C Boulas, JV Davidovits, F Rondelez, D Vuillaume Physical Review Letters 76 (25), 4797, 1996 | 357 | 1996 |
Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction M Suri, O Bichler, D Querlioz, O Cueto, L Perniola, V Sousa, D Vuillaume, ... 2011 International Electron Devices Meeting, 4.4. 1-4.4. 4, 2011 | 356 | 2011 |
Bio-inspired stochastic computing using binary CBRAM synapses M Suri, D Querlioz, O Bichler, G Palma, E Vianello, D Vuillaume, ... IEEE Transactions on Electron Devices 60 (7), 2402-2409, 2013 | 271 | 2013 |
Plasticity in memristive devices for spiking neural networks S Saïghi, CG Mayr, T Serrano-Gotarredona, H Schmidt, G Lecerf, J Tomas, ... Frontiers in neuroscience 9, 51, 2015 | 261 | 2015 |
Metal∕ organic∕ metal bistable memory devices D Tondelier, K Lmimouni, D Vuillaume, C Fery, G Haas Applied Physics Letters 85 (23), 5763-5765, 2004 | 249 | 2004 |
Theory of electrical rectification in a molecular monolayer C Krzeminski, C Delerue, G Allan, D Vuillaume, RM Metzger Physical Review B 64 (8), 085405, 2001 | 248 | 2001 |
Filamentary switching: synaptic plasticity through device volatility S La Barbera, D Vuillaume, F Alibart ACS nano 9 (1), 941-949, 2015 | 221 | 2015 |
Visual pattern extraction using energy-efficient “2-PCM synapse” neuromorphic architecture O Bichler, M Suri, D Querlioz, D Vuillaume, B DeSalvo, C Gamrat IEEE Transactions on Electron Devices 59 (8), 2206-2214, 2012 | 220 | 2012 |
A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing F Alibart, S Pleutin, O Bichler, C Gamrat, T Serrano‐Gotarredona, ... Advanced Functional Materials 22 (3), 609-616, 2012 | 219 | 2012 |
Molecular rectifying diodes from self-assembly on silicon S Lenfant, C Krzeminski, C Delerue, G Allan, D Vuillaume Nano letters 3 (6), 741-746, 2003 | 213 | 2003 |
Optoelectronic switch and memory devices based on polymer‐functionalized carbon nanotube transistors J Borghetti, V Derycke, S Lenfant, P Chenevier, A Filoramo, M Goffman, ... Advanced materials 18 (19), 2535-2540, 2006 | 190 | 2006 |
CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications M Suri, O Bichler, D Querlioz, G Palma, E Vianello, D Vuillaume, ... 2012 International Electron Devices Meeting, 10.3. 1-10.3. 4, 2012 | 174 | 2012 |
Nano-field effect transistor with an organic self-assembled monolayer as gate insulator J Collet, D Vuillaume Applied Physics Letters 73 (18), 2681-2683, 1998 | 174 | 1998 |
Physical aspects of low power synapses based on phase change memory devices M Suri, O Bichler, D Querlioz, B Traoré, O Cueto, L Perniola, V Sousa, ... Journal of Applied Physics 112 (5), 2012 | 166 | 2012 |
Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current–voltage characteristics AK Chauhan, DK Aswal, SP Koiry, SK Gupta, JV Yakhmi, C Sürgers, ... Applied Physics A 90, 581-589, 2008 | 165 | 2008 |
Organic insulating films of nanometer thicknesses D Vuillaume, C Boulas, J Collet, JV Davidovits, F Rondelez Applied physics letters 69 (11), 1646-1648, 1996 | 158 | 1996 |