| Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks A Bengoechea-Encabo, F Barbagini, S Fernandez-Garrido, J Grandal, ... Journal of Crystal Growth 325 (1), 89-92, 2011 | 123 | 2011 |
| Selective area growth of In (Ga) N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si (111): from ultraviolet to infrared emission S Albert, A Bengoechea-Encabo, MA Sánchez-García, X Kong, ... Nanotechnology 24 (17), 175303, 2013 | 56 | 2013 |
| Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns S Albert, A Bengoechea-Encabo, X Kong, MA Sanchez-Garcia, E Calleja, ... Applied Physics Letters 102 (18), 2013 | 50 | 2013 |
| Selective area growth of a-and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography A Bengoechea-Encabo, S Albert, MA Sanchez-Garcia, LL López, ... Journal of crystal growth 353 (1), 1-4, 2012 | 46 | 2012 |
| Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies S Albert, A Bengoechea-Encabo, P Lefebvre, F Barbagini, ... Applied Physics Letters 100 (23), 2012 | 41 | 2012 |
| Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si (111) substrates S Albert, A Bengoechea-Encabo, P Lefebvre, MA Sanchez-Garcia, ... Applied Physics Letters 99 (13), 2011 | 41 | 2011 |
| Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission S Albert, A Bengoechea-Encabo, MA Sanchez-Garcia, E Calleja, U Jahn Journal of Applied Physics 113 (11), 2013 | 35 | 2013 |
| Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In, Ga) N/GaN nanowires X Kong, S Albert, A Bengoechea-Encabo, MA Sanchez-Garcia, E Calleja, ... Nanotechnology 23 (48), 485701, 2012 | 32 | 2012 |
| Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage AB Encabo, J Howgate, M Stutzmann, M Eickhoff, MA Sánchez-García Sensors and Actuators B: Chemical 142 (1), 304-307, 2009 | 32 | 2009 |
| Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires Ž Gačević, N Vukmirović, N García-Lepetit, A Torres-Pardo, M Müller, ... Physical Review B 93 (12), 125436, 2016 | 28 | 2016 |
| InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy J Grandal, J Pereiro, A Bengoechea-Encabo, S Fernández-Garrido, ... Applied Physics Letters 98 (6), 2011 | 28 | 2011 |
| Crystallographically uniform arrays of ordered (In) GaN nanocolumns Ž Gačević, A Bengoechea-Encabo, S Albert, A Torres-Pardo, ... Journal of Applied Physics 117 (3), 2015 | 27 | 2015 |
| Investigation of AlInN barrier ISFET structures with GaN capping for pH detection T Brazzini, A Bengoechea-Encabo, MA Sánchez-García, F Calle Sensors and Actuators B: Chemical 176, 704-707, 2013 | 27 | 2013 |
| Light-emitting-diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range A Bengoechea-Encabo, S Albert, D Lopez-Romero, P Lefebvre, ... Nanotechnology 25 (43), 435203, 2014 | 24 | 2014 |
| Demonstration of (In, Ga) N/GaN core–shell micro light-emitting diodes grown by molecular beam epitaxy on ordered MOVPE GaN pillars S Albert, A Bengoechea-Encabo, J Ledig, T Schimpke, ... Crystal Growth & Design 15 (8), 3661-3665, 2015 | 22 | 2015 |
| Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates A Bengoechea-Encabo, S Albert, J Zuniga-Perez, P De Mierry, ... Applied Physics Letters 103 (24), 2013 | 19 | 2013 |
| Correlation among growth conditions, morphology, and optical properties of nanocolumnar InGaN/GaN heterostructures selectively grown by molecular beam epitaxy S Albert, A Bengoechea-Encabo, X Kong, MA Sanchez-Garcia, ... Crystal Growth & Design 15 (6), 2661-2666, 2015 | 18 | 2015 |
| Lattice pulling effect and strain relaxation in axial (In, Ga) N/GaN nanowire heterostructures grown on GaN‐buffered Si (111) substrate X Kong, S Albert, A Bengoechea‐Encabo, MA Sanchez‐Garcia, E Calleja, ... physica status solidi (a) 212 (4), 736-739, 2015 | 18 | 2015 |
| Titanium induced polarity inversion in ordered (In, Ga) N/GaN nanocolumns X Kong, H Li, S Albert, A Bengoechea-Encabo, MA Sanchez-Garcia, ... Nanotechnology 27 (6), 065705, 2016 | 17 | 2016 |
| Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns F Barbagini, A Bengoechea-Encabo, S Albert, J Martinez, ... Nanoscale research letters 6, 1-9, 2011 | 17 | 2011 |
