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Nicolas R. Vaxelaire
Nicolas R. Vaxelaire
Research Scientist, Univ. Grenoble Alpes, CEA, LETI
Verified email at cea.fr
Title
Cited by
Cited by
Year
Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2019
1012019
Dislocation storage in single slip-oriented Cu micro-tensile samples: new insights via X-ray microdiffraction
C Kirchlechner, D Kiener, C Motz, S Labat, N Vaxelaire, O Perroud, ...
Philosophical Magazine 91 (7-9), 1256-1264, 2011
552011
Correlation between electric-field-induced phase transition and piezoelectricity in lead zirconate titanate films
V Kovacova, N Vaxelaire, G Le Rhun, P Gergaud, T Schmitz-Kempen, ...
Physical Review B 90 (14), 140101, 2014
392014
Methodology for studying strain inhomogeneities in polycrystalline thin films during in situ thermal loading using coherent x-ray diffraction
N Vaxelaire, H Proudhon, S Labat, C Kirchlechner, J Keckes, V Jacques, ...
New Journal of Physics 12 (3), 035018, 2010
372010
Nanosecond laser anneal (NLA) for Si-implanted HfO2 ferroelectric memories integrated in back-end of line (BEOL)
L Grenouillet, T Francois, J Coignus, S Kerdiles, N Vaxelaire, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
342020
Demonstration of BEOL-compatible ferroelectric Hf
T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire
IEDM Tech. Dig, 15.7, 2019
332019
Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0. 5Zr0. 5O2 and Si: HfO2-based MFM capacitors
T Francois, L Grenouillet, J Coignus, N Vaxelaire, C Carabasse, ...
Applied Physics Letters 118 (6), 2021
292021
Evolution of surface roughness in silicon X-ray mirrors exposed to a low-energy ion beam
E Ziegler, L Peverini, N Vaxelaire, A Cordon-Rodriguez, A Rommeveaux, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
282010
New insights into single-grain mechanical behavior from temperature-dependent 3-D coherent X-ray diffraction
N Vaxelaire, S Labat, TW Cornelius, C Kirchlechner, J Keckes, T Schulli, ...
Acta materialia 78, 46-55, 2014
182014
Actuation efficiency of polyvinylidene fluoride-based co-and ter-polymers
P Lheritier, S Noel, N Vaxelaire, FD Dos Santos, E Defay
Polymer 156, 270-275, 2018
172018
Performance assessment of BEOL-integrated HfO2-based ferroelectric capacitors for FeRAM memory arrays
L Grenouillet, T Francois, J Coignus, N Vaxelaire, C Carabasse, F Triozon, ...
2020 IEEE Silicon Nanoelectronics Workshop (SNW), 5-6, 2020
152020
Sub-micrometre depth-gradient measurements of phase, strain and texture in polycrystalline thin films: a nano-pencil beam diffraction approach
N Vaxelaire, P Gergaud, GBM Vaughan
Journal of Applied Crystallography 47 (2), 495-504, 2014
152014
Improvement of HfO2based RRAM array performances by local Si implantation
M Barlas, A Grossi, L Grenouillet, E Vianello, E Nolot, N Vaxelaire, ...
2017 IEEE International Electron Devices Meeting (IEDM), 14.6.1-14.6.4., 2018
132018
BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions
R Alcala, M Materano, PD Lomenzo, L Grenouillet, T Francois, J Coignus, ...
IEEE Journal of the Electron Devices Society 10, 907-912, 2022
122022
Effect of structural in-depth heterogeneities on electrical properties of Pb (Zr0. 52Ti0. 48) O3 thin films as revealed by nano-beam X-ray diffraction
N Vaxelaire, V Kovacova, A Bernasconi, G Le Rhun, M Alvarez-Murga, ...
Journal of Applied Physics 120 (10), 2016
92016
Synthesis of In-Plane Oriented Tin Sulfides by Organosulfur-Mediated Sulfurization of Ultrathin SnO2 Films
B Chatmaneerungcharoen, M Fraccaroli, F Martin, C Guedj, E Nolot, ...
Chemistry of Materials 34 (13), 5842-5851, 2022
82022
Microstructural and chemical analysis of polycrystalline LiNbO3 films obtained by room-temperature RF sputtering after various annealing durations
LC Sauze, N Vaxelaire, D Rouchon, F Pierre, R Templier, D Remiens, ...
Journal of Vacuum Science & Technology A 38 (4), 2020
82020
Finite element simulations of coherent diffraction in elastoplastic polycrystalline aggregates
H Proudhon, N Vaxelaire, S Labat, S Forest, O Thomas
Comptes Rendus Physique 11 (3-4), 293-303, 2010
82010
Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe1−xTex Thin Films
M Tomelleri, F Hippert, T Farjot, C Licitra, N Vaxelaire, JB Dory, D Benoit, ...
physica status solidi (RRL)–Rapid Research Letters 15 (3), 2000451, 2021
72021
Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance
T Francois, J Coignus, L Grenouillet, JP Barnes, N Vaxelaire, J Ferrand, ...
2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019
72019
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Articles 1–20