Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper L Banszerus, M Schmitz, S Engels, J Dauber, M Oellers, F Haupt, ...
Science advances 1 (6), e1500222, 2015
742 2015 Raman spectroscopy as probe of nanometre-scale strain variations in graphene C Neumann, S Reichardt, P Venezuela, M Drögeler, L Banszerus, ...
Nature communications 6 (1), 8429, 2015
378 2015 Ballistic transport exceeding 28 μm in CVD grown graphene L Banszerus, M Schmitz, S Engels, M Goldsche, K Watanabe, T Taniguchi, ...
Nano letters 16 (2), 1387-1391, 2016
331 2016 Production and processing of graphene and related materials C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ...
2D Materials 7 (2), 022001, 2020
298 * 2020 Spin lifetimes exceeding 12 ns in graphene nonlocal spin valve devices M Drögeler, C Franzen, F Volmer, T Pohlmann, L Banszerus, M Wolter, ...
Nano letters 16 (6), 3533-3539, 2016
230 2016 Out-of-plane heat transfer in van der Waals stacks through electron–hyperbolic phonon coupling KJ Tielrooij, NCH Hesp, A Principi, MB Lundeberg, EAA Pogna, ...
Nature nanotechnology 13 (1), 41-46, 2018
141 2018 Identifying suitable substrates for high-quality graphene-based heterostructures L Banszerus, H Janssen, M Otto, A Epping, T Taniguchi, K Watanabe, ...
2D Materials 4 (2), 025030, 2017
94 2017 Gate-defined electron-hole double dots in bilayer graphene L Banszerus, B Frohn, A Epping, D Neumaier, K Watanabe, T Taniguchi, ...
arXiv preprint arXiv:1803.10857, 2018
51 2018 High mobility dry-transferred CVD bilayer graphene M Schmitz, S Engels, L Banszerus, K Watanabe, T Taniguchi, C Stampfer, ...
Applied Physics Letters 110 (26), 263110, 2017
49 2017 Single-electron double quantum dots in bilayer graphene L Banszerus, S Möller, E Icking, K Watanabe, T Taniguchi, C Volk, ...
Nano letters 20 (3), 2005-2011, 2020
43 2020 Graphene Field-Effect Transistors With High Extrinsic M Bonmann, M Asad, X Yang, A Generalov, A Vorobiev, L Banszerus, ...
IEEE Electron Device Letters 40 (1), 131-134, 2018
41 2018 Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons EAA Pogna, X Jia, A Principi, A Block, L Banszerus, J Zhang, X Liu, ...
ACS nano 15 (7), 11285-11295, 2021
37 2021 Electron–hole crossover in gate-controlled bilayer graphene quantum dots L Banszerus, A Rothstein, T Fabian, S Möller, E Icking, S Trellenkamp, ...
Nano letters 20 (10), 7709-7715, 2020
35 2020 Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport L Banszerus, B Frohn, T Fabian, S Somanchi, A Epping, M Müller, ...
Physical review letters 124 (17), 177701, 2020
34 2020 Extraordinary high room-temperature carrier mobility in graphene-WSe L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ...
arXiv preprint arXiv:1909.09523, 2019
30 2019 Quantum transport through MoS2 constrictions defined by photodoping A Epping, L Banszerus, J Güttinger, L Krückeberg, K Watanabe, ...
Journal of Physics: Condensed Matter 30 (20), 205001, 2018
25 2018 Encapsulated graphene‐based Hall sensors on foil with increased sensitivity Z Wang, L Banszerus, M Otto, K Watanabe, T Taniguchi, C Stampfer, ...
physica status solidi (b) 253 (12), 2316-2320, 2016
22 2016 Line shape of the Raman 2D peak of graphene in van der Waals heterostructures C Neumann, L Banszerus, M Schmitz, S Reichardt, J Sonntag, ...
physica status solidi (b) 253 (12), 2326-2330, 2016
19 2016 Spin-valley coupling in single-electron bilayer graphene quantum dots L Banszerus, S Möller, C Steiner, E Icking, S Trellenkamp, F Lentz, ...
Nature Communications 12 (1), 5250, 2021
18 2021 The dependence of the high-frequency performance of graphene field-effect transistors on channel transport properties M Asad, M Bonmann, X Yang, A Vorobiev, K Jeppson, L Banszerus, ...
IEEE Journal of the Electron Devices Society 8, 457-464, 2020
17 2020 
Christoph StampferRWTH AachenAdresse e-mail validée de physik.rwth-aachen.de
