High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- /RF-Sputtered- W Choi, O Seok, H Ryu, HY Cha, KS Seo
IEEE Electron Device Letters 35 (2), 175-177, 2013
126 2013 High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators O Seok, W Ahn, MK Han, MW Ha
Semiconductor science and technology 28 (2), 025001, 2012
51 2012 High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO2 gate insulator O Seok, W Ahn, MK Han, MW Ha
Electronics letters 49 (6), 425-427, 2013
19 2013 High-voltage Schottky barrier diode on silicon substrate MW Ha, CH Roh, DW Hwang, HG Choi, HJ Song, JH Lee, JH Park, ...
Japanese journal of applied physics 50 (6S), 06GF17, 2011
19 2011 AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator O Seok, MW Ha
Solid-State Electronics 105, 1-5, 2015
16 2015 High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment O Seok, MK Han, YC Byun, J Kim, HC Shin, MW Ha
Solid-State Electronics 103, 49-53, 2015
15 2015 High breakdown voltage AlGaN/GaN HEMTs employing recessed gate edge structure M Kim, YH Choi, J Lim, YS Kim, O Seok, MK Han
Proc. international conference on compound semiconductor manufacturing …, 2010
14 2010 Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide O Seok, IH Kang, JH Moon, HW Kim, MW Ha, W Bahng
Microelectronic Engineering 225, 111280, 2020
13 2020 Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer HW Kim, O Seok, JH Moon, W Bahng, J Jo
Japanese Journal of Applied Physics 56 (12), 120305, 2017
12 2017 Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors O Seok, W Ahn, MK Han, MW Ha
Journal of Vacuum Science & Technology B 31 (1), 2013
12 2013 Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well O Seok, MW Ha, IH Kang, HW Kim, DY Kim, W Bahng
Japanese Journal of Applied Physics 57 (6S1), 06HC07, 2018
10 2018 High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates O Seok, HW Kim, JH Moon, HS Lee, W Bahng
Japanese Journal of Applied Physics 57 (6S1), 06HC08, 2018
9 2018 TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing JH Moon, IH Kang, HW Kim, O Seok, W Bahng, MW Ha
Current Applied Physics 20 (12), 1386-1390, 2020
8 2020 High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing W Ahn, O Seok, SM Song, MK Han, MW Ha
Journal of crystal growth 378, 600-603, 2013
8 2013 Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma O Seok, YJ Kim, W Bahng
Physica Scripta 95 (4), 045606, 2020
7 2020 Electrical Characteristics of SiO2 /4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2 YJ Jo, JH Moon, O Seok, W Bahng, TJ Park, MW Ha
JSTS: Journal of Semiconductor Technology and Science 17 (2), 265-270, 2017
7 2017 Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO2 gate insulator W Ahn, O Seok, MW Ha, YS Kim, MK Han
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
7 2013 Various Schottky contacts of AlGaN/GaN Schottky barrier diodes (SBDs) W Ahn, O Seok, MW Ha, YS Kim, MK Han
ECS Transactions 53 (2), 171, 2013
7 2013 High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation M Kim, O Seok, MK Han, MW Ha
Journal of Electrical Engineering and Technology 8 (5), 1157-1162, 2013
6 2013 High voltage AlGaN/GaN high-electron-mobility transistors (HEMTs) employing oxygen annealing YH Choi, J Lim, YS Kim, O Seok, MK Kim, MK Han
2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010
6 2010