GaBiAs: A material for optoelectronic terahertz devices K Bertulis, A Krotkus, G Aleksejenko, V Pačebutas, R Adomavičius, ... Applied physics letters 88 (20), 2006 | 203 | 2006 |
Inhibited carrier transfer in ensembles of isolated quantum dots C Lobo, R Leon, S Marcinkevicius, W Yang, PC Sercel, XZ Liao, J Zou, ... Physical Review B 60 (24), 16647, 1999 | 142* | 1999 |
Picosecond carrier lifetime in GaAs implanted with high doses of As ions: an alternative material to low‐temperature GaAs for optoelectronic applications A Krotkus, S Marcinkevicius, J Jasinski, M Kaminska, HH Tan, C Jagadish Applied physics letters 66 (24), 3304-3306, 1995 | 121 | 1995 |
Carrier dynamics in modulation-doped In As∕ Ga As quantum dots J Siegert, S Marcinkevičius, QX Zhao Physical Review B 72 (8), 085316, 2005 | 119 | 2005 |
Transient electromagnetically induced transparency in self-assembled quantum dots S Marcinkevičius, A Gushterov, JP Reithmaier Applied Physics Letters 92 (4), 2008 | 110 | 2008 |
1 micron wavelength photo-and electroluminescence from a conjugated polymer M Chen, E Perzon, MR Andersson, S Marcinkevicius, SKM Jönsson, ... Applied physics letters 84 (18), 3570-3572, 2004 | 107 | 2004 |
Iron as a source of efficient Shockley-Read-Hall recombination in GaN D Wickramaratne, JX Shen, CE Dreyer, M Engel, M Marsman, G Kresse, ... Applied Physics Letters 109 (16), 2016 | 88 | 2016 |
Ion-implanted for ultrafast optoelectronic applications C Carmody, HH Tan, C Jagadish, A Gaarder, S Marcinkevičius Applied physics letters 82 (22), 3913-3915, 2003 | 80 | 2003 |
High current-induced degradation of AlGaN ultraviolet light emitting diodes A Pinos, S Marcinkevičius, MS Shur Journal of Applied Physics 109 (10), 2011 | 79 | 2011 |
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy A Pinos, V Liuolia, S Marcinkevičius, J Yang, R Gaska, MS Shur Journal of Applied Physics 109 (11), 2011 | 69 | 2011 |
Carrier capture and escape in In x Ga 1− x A s/G a A s quantum dots: Effects of intermixing S Marcinkevičius, R Leon Physical Review B 59 (7), 4630, 1999 | 68 | 1999 |
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells S Marcinkevičius, KM Kelchner, LY Kuritzky, S Nakamura, SP DenBaars, ... Applied Physics Letters 103 (11), 2013 | 58 | 2013 |
Mode locking a 1550? nm semiconductor disk laser by using a GaInNAs saturable absorber H Lindberg, M Sadeghi, M Westlund, S Wang, A Larsson, M Strassner, ... Optics letters 30 (20), 2793-2795, 2005 | 57 | 2005 |
Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties R Leon, S Chaparro, SR Johnson, C Navarro, X Jin, YH Zhang, J Siegert, ... Journal of applied physics 91 (9), 5826-5830, 2002 | 56 | 2002 |
Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs A Krotkus, K Bertulis, L Dapkus, U Olin, S Marcinkevičius Applied physics letters 75 (21), 3336-3338, 1999 | 56 | 1999 |
Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy A Pinos, S Marcinkevičius, J Yang, Y Bilenko, M Shatalov, R Gaska, ... Applied Physics Letters 95 (18), 2009 | 55 | 2009 |
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy V Liuolia, A Pinos, S Marcinkevičius, YD Lin, H Ohta, SP DenBaars, ... Applied Physics Letters 97 (15), 2010 | 54 | 2010 |
Ensemble interactions in strained semiconductor quantum dots R Leon, S Marcinkevičius, XZ Liao, J Zou, DJH Cockayne, S Fafard Physical Review B 60 (12), R8517, 1999 | 54 | 1999 |
Be-doped low-temperature-grown GaAs material for optoelectronic switches A Krotkus, K Bertulis, M Kaminska, K Korona, A Wolos, J Siegert, ... IEE Proceedings-Optoelectronics 149 (3), 111-115, 2002 | 53 | 2002 |
Electron and hole capture cross-sections of Fe acceptors in GaN: Fe epitaxially grown on sapphire T Aggerstam, A Pinos, S Marcinkevičius, M Linnarsson, S Lourdudoss Journal of electronic materials 36, 1621-1624, 2007 | 51 | 2007 |