Zhongming Zeng
Zhongming Zeng
Affiliation inconnue
Adresse e-mail validée de sinano.ac.cn
Citée par
Citée par
Flexible all‐solid‐state supercapacitors based on liquid‐exfoliated black‐phosphorus nanoflakes
C Hao, B Yang, F Wen, J Xiang, L Li, W Wang, Z Zeng, B Xu, Z Zhao, Z Liu, ...
Advanced Materials 28 (16), 3194-3201, 2016
Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ...
Scientific reports 3 (1), 1-5, 2013
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 112507, 2011
Spin transfer nano-oscillators
Z Zeng, G Finocchio, H Jiang
Nanoscale 5 (6), 2219-2231, 2013
Te‐doped black phosphorus field‐effect transistors
B Yang, B Wan, Q Zhou, Y Wang, W Hu, W Lv, Q Chen, Z Zeng, F Wen, ...
Advanced Materials 28 (42), 9408-9415, 2016
Synthesis and photovoltaic effect of vertically aligned ZnO/ZnS core/shell nanowire arrays
K Wang, JJ Chen, ZM Zeng, J Tarr, WL Zhou, Y Zhang, YF Yan, CS Jiang, ...
Applied Physics Letters 96 (12), 123105, 2010
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 07C720, 2011
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ...
ACS nano 6 (7), 6115-6121, 2012
Liquid‐exfoliated black phosphorous nanosheet thin films for flexible resistive random access memory applications
C Hao, F Wen, J Xiang, S Yuan, B Yang, L Li, W Wang, Z Zeng, L Wang, ...
Advanced Functional Materials 26 (12), 2016-2024, 2016
Giant spin-torque diode sensitivity in the absence of bias magnetic field
B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ...
Nature communications 7 (1), 1-7, 2016
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 102509, 2011
The detection of H2S at room temperature by using individual indium oxide nanowire transistors
Z Zeng, K Wang, Z Zhang, J Chen, W Zhou
Nanotechnology 20 (4), 045503, 2008
Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation
B Wan, B Yang, Y Wang, J Zhang, Z Zeng, Z Liu, W Wang
Nanotechnology 26 (43), 435702, 2015
Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
T Li, G Du, B Zhang, Z Zeng
Applied Physics Letters 105 (9), 093107, 2014
Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy
H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ...
Journal of Physics D: Applied Physics 45 (2), 025001, 2011
Sulfur-doped black phosphorus field-effect transistors with enhanced stability
W Lv, B Yang, B Wang, W Wan, Y Ge, R Yang, C Hao, J Xiang, B Zhang, ...
ACS applied materials & interfaces 10 (11), 9663-9668, 2018
Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM
PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ...
IEEE Electron Device Letters 32 (1), 57-59, 2010
Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates
T Li, B Wan, G Du, B Zhang, Z Zeng
AIP Advances 5 (5), 057102, 2015
Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells
ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ...
Applied Physics Letters 98 (7), 072512, 2011
Magnetic/nonmagnetic/magnetic tunnel junction based on hybrid organic Langmuir-Blodgett-films
TX Wang, HX Wei, ZM Zeng, XF Han, ZM Hong, GQ Shi
Applied physics letters 88 (24), 242505, 2006
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