Zhongming Zeng
Zhongming Zeng
Affiliation inconnue
Adresse e-mail validée de sinano.ac.cn
Citée par
Citée par
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 112507, 2011
Flexible all‐solid‐state supercapacitors based on liquid‐exfoliated black‐phosphorus nanoflakes
C Hao, B Yang, F Wen, J Xiang, L Li, W Wang, Z Zeng, B Xu, Z Zhao, Z Liu, ...
Advanced Materials 28 (16), 3194-3201, 2016
Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ...
Scientific reports 3, 1426, 2013
Synthesis and photovoltaic effect of vertically aligned ZnO/ZnS core/shell nanowire arrays
K Wang, JJ Chen, ZM Zeng, J Tarr, WL Zhou, Y Zhang, YF Yan, CS Jiang, ...
Applied Physics Letters 96 (12), 123105, 2010
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 07C720, 2011
Spin transfer nano-oscillators
Z Zeng, G Finocchio, H Jiang
Nanoscale 5 (6), 2219-2231, 2013
Te‐Doped Black Phosphorus Field‐Effect Transistors
B Yang, B Wan, Q Zhou, Y Wang, W Hu, W Lv, Q Chen, Z Zeng, F Wen, ...
Advanced Materials 28 (42), 9408-9415, 2016
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ...
ACS nano 6 (7), 6115-6121, 2012
Giant spin-torque diode sensitivity in the absence of bias magnetic field
B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ...
Nature communications 7 (1), 1-7, 2016
Liquid‐Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
C Hao, F Wen, J Xiang, S Yuan, B Yang, L Li, W Wang, Z Zeng, L Wang, ...
Advanced Functional Materials 26 (12), 2016-2024, 2016
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 102509, 2011
The detection of H2S at room temperature by using individual indium oxide nanowire transistors
Z Zeng, K Wang, Z Zhang, J Chen, W Zhou
Nanotechnology 20 (4), 045503, 2008
Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation
B Wan, B Yang, Y Wang, J Zhang, Z Zeng, Z Liu, W Wang
Nanotechnology 26 (43), 435702, 2015
Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy
H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ...
Journal of Physics D: Applied Physics 45 (2), 025001, 2011
Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM
PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ...
IEEE Electron Device Letters 32 (1), 57-59, 2010
Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
T Li, G Du, B Zhang, Z Zeng
Applied Physics Letters 105 (9), 093107, 2014
Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells
ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ...
Applied Physics Letters 98 (7), 072512, 2011
Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates
T Li, B Wan, G Du, B Zhang, Z Zeng
Aip Advances 5 (5), 057102, 2015
Magnetic/nonmagnetic/magnetic tunnel junction based on hybrid organic Langmuir-Blodgett-films
TX Wang, HX Wei, ZM Zeng, XF Han, ZM Hong, GQ Shi
Applied physics letters 88 (24), 242505, 2006
Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation
ZM Zeng, P Upadhyaya, P Khalili Amiri, KH Cheung, JA Katine, J Langer, ...
Applied Physics Letters 99 (3), 032503, 2011
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