| Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy R Köster, JS Hwang, C Durand, DLS Dang, J Eymery Nanotechnology 21 (1), 015602, 2009 | 240 | 2009 |
| M-plane core–shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices R Koester, JS Hwang, D Salomon, X Chen, C Bougerol, JP Barnes, ... Nano letters 11 (11), 4839-4845, 2011 | 237 | 2011 |
| Flexible light-emitting diodes based on vertical nitride nanowires X Dai, A Messanvi, H Zhang, C Durand, J Eymery, C Bougerol, FH Julien, ... Nano letters 15 (10), 6958-6964, 2015 | 233 | 2015 |
| Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors M Tchernycheva, A Messanvi, A de Luna Bugallo, G Jacopin, P Lavenus, ... Nano letters 14 (6), 3515-3520, 2014 | 206 | 2014 |
| Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates XJ Chen, G Perillat-Merceroz, D Sam-Giao, C Durand, J Eymery Applied Physics Letters 97 (15), 2010 | 170 | 2010 |
| Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field L Mancini, N Amirifar, D Shinde, I Blum, M Gilbert, A Vella, F Vurpillot, ... The Journal of Physical Chemistry C 118 (41), 24136-24151, 2014 | 166 | 2014 |
| Flexible white light emitting diodes based on nitride nanowires and nanophosphors N Guan, X Dai, A Messanvi, H Zhang, J Yan, E Gautier, C Bougerol, ... ACS photonics 3 (4), 597-603, 2016 | 117 | 2016 |
| Effect of the quantum well thickness on the performance of InGaN photovoltaic cells L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ... Applied Physics Letters 105 (13), 2014 | 89 | 2014 |
| Flexible photodiodes based on nitride core/shell p–n junction nanowires H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ... ACS applied materials & interfaces 8 (39), 26198-26206, 2016 | 87 | 2016 |
| Photoluminescent silicon nanocrystals synthesized by reactive laser ablation D Riabinina, C Durand, M Chaker, F Rosei Applied physics letters 88 (7), 2006 | 79 | 2006 |
| Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN … L Rigutti, I Blum, D Shinde, D Hernández-Maldonado, W Lefebvre, ... Nano letters 14 (1), 107-114, 2014 | 78 | 2014 |
| Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical … C Durand, C Dubourdieu, C Vallée, V Loup, M Bonvalot, O Joubert, ... Journal of applied physics 96 (3), 1719-1729, 2004 | 75 | 2004 |
| Nucleation and growth of Si nanocrystals in an amorphous matrix D Riabinina, C Durand, J Margot, M Chaker, GA Botton, F Rosei Physical Review B—Condensed Matter and Materials Physics 74 (7), 075334, 2006 | 74 | 2006 |
| Single-wire light-emitting diodes based on GaN wires containing both polar and nonpolar InGaN/GaN quantum wells G Jacopin, ADL Bugallo, P Lavenus, L Rigutti, FH Julien, LF Zagonel, ... Applied Physics Express 5 (1), 014101, 2011 | 73 | 2011 |
| Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy A Bugallo, L Rigutti, G Jacopin, FH Julien, C Durand, XJ Chen, ... Applied Physics Letters 98 (23), 2011 | 73 | 2011 |
| Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate AL Bavencove, D Salomon, M Lafossas, B Martin, A Dussaigne, F Levy, ... Electronics letters 47 (13), 765-767, 2011 | 67 | 2011 |
| A novel approach to the synthesis of photoluminescent germanium nanoparticles by reactive laser ablation D Riabinina, C Durand, M Chaker, N Rowell, F Rosei Nanotechnology 17 (9), 2152, 2006 | 60 | 2006 |
| M-Plane GaN/InAlN Multiple Quantum Wells in Core–Shell Wire Structure for UV Emission C Durand, C Bougerol, JF Carlin, G Rossbach, F Godel, J Eymery, ... ACS photonics 1 (1), 38-46, 2014 | 55 | 2014 |
| Experimental and theoretical analysis of transport properties of core–shell wire light emitting diodes probed by electron beam induced current microscopy P Lavenus, A Messanvi, L Rigutti, ADL Bugallo, H Zhang, F Bayle, ... Nanotechnology 25 (25), 255201, 2014 | 53 | 2014 |
| Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy XJ Chen, B Gayral, D Sam-Giao, C Bougerol, C Durand, J Eymery Applied Physics Letters 99 (25), 2011 | 49 | 2011 |
Joël EymeryUGA, CEA, IRIG-MEM, Nanostructure and X-Ray Lab. (HDR, Dr Res. & Senior Expert CEA)Verified email at cea.fr
