| Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity JD Wei, SF Li, A Atamuratov, HH Wehmann, A Waag Applied Physics Letters 97 (17), 2010 | 38 | 2010 |
| Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes AE Atamuratov, A Abdikarimov, M Khalilloev, ZA Atamuratova, ... Наносистемы: физика, химия, математика 8 (1), 71-74, 2017 | 10 | 2017 |
| Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer AE Atamuratov, ZA Atamuratova, A Yusupov, A Ghani Results in Physics 11, 656-658, 2018 | 7 | 2018 |
| Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection JCCKK Atabek E. Atamuratov, Ahmed Yusupov, Zukhra A. Atamuratova Applied Sciences 10 (21), 7935-7944, 2020 | 6 | 2020 |
| Experimental assessment of the nonuniform radiation-induced space-charge distribution in the surface region of silicon AE Atamuratov, A Yusupov, K Adinaev Inorganic materials 37 (8), 767-768, 2001 | 6 | 2001 |
| The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET AE Abdikarimov, A Yusupov, AE Atamuratov Technical Physics Letters 44, 962-964, 2018 | 5 | 2018 |
| The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat E Atamuratov, UA Aminov, ZA Atamuratova, M Halillaev, A Abdikarimov, ... Наносистемы: физика, химия, математика 6 (6), 837-842, 2015 | 5 | 2015 |
| Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET A Abdikarimov, G Indalecio, E Comesaña, AJ Garcia-Loureiro, N Seoane, ... 2014 International Workshop on Computational Electronics (IWCE), 1-4, 2014 | 5 | 2014 |
| Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, ... Наносистемы: физика, химия, математика 13 (2), 148-155, 2022 | 4 | 2022 |
| Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer ZA Atamuratova, A Yusupov, BO Khalikberdiev, AE Atamuratov Technical Physics 64, 1006-1009, 2019 | 4 | 2019 |
| Influence of the Field of the Built_in Oxide Charge on the Lateral C–V Dependence of the MOSFET AE Atamuratov, DY Matrasulov, PK Khabibullaev Doklady Physics 55 (2), 52-54, 2010 | 4 | 2010 |
| Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement. AÉ Atamuratov, DU Matrasulov, PK Khabibullaev Doklady Physics 52 (6), 2007 | 4 | 2007 |
| Optimization of vertically stacked nanosheet FET immune to self-heating M Balasubbareddy, K Sivasankaran, AE Atamuratov, MM Khalilloev Micro and Nanostructures 182, 207633, 2023 | 3 | 2023 |
| The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS2 based MOSFET AE Atamuratov, XS Saparov, TA Atamuratov, A Yusupov, F Schwierz 2021 International Conference on Information Science and Communications …, 2021 | 3 | 2021 |
| Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, AG Loureriro 2021 13th Spanish Conference on Electron Devices (CDE), 62-65, 2021 | 3 | 2021 |
| The self-heating effect in junctionless fin field-effect transistors based on silicon-on-insulator structures with different channel shapes AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov Technical Physics Letters 47 (7), 542-545, 2021 | 2 | 2021 |
| The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration AE Atamuratov, BQ Jumaboyev, A Yusupov, AE Abdikarimov, AG Loureiro 2022 International Conference on Information Science and Communications …, 2022 | 1 | 2022 |
| Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence A Yusupov, AE Atamuratov, AE Abdikarimov, TA Atamuratov, KA Sattarov, ... 2022 International Conference on Information Science and Communications …, 2022 | 1 | 2022 |
| Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET AE Atamuratov, MM Khalilloev, A Yusupov, AJ García-Loureiro, ... Applied Sciences 10 (15), 5327, 2020 | 1 | 2020 |
| The amplitude of RTN in nanometer SOI FinFET with different channel shape. A Yusupov, AE Atamuratov, AE Abdikarimov, JC Chedjou, K Kyamakya World Scientific Proceedings Series on Computer Engineering and Information …, 2020 | 1 | 2020 |
